Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

CHEE-WEE LIULan, H.-S.H.-S.LanCHEE-WEE LIU2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84900869980&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/387390Ballistic electron transport calculation of strained germanium-tin fin field-effect transistorsjournal article10.1063/1.4876441