2004-04-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/714382摘要：本計劃的目的是要研製具有特殊奈米結構的半導體，建立各種特殊奈米結構的成長參 數，這些獨特技術所合成的奈米結構將有新奇的物理特性。我們將建立量測奈米材料之 結構、光電、機械、熱及磁的技術，以探討其物理性質，同時亦將建立快速的order-N 量子電子理論方法，計算半導體奈米材料，並定量預言及協助尋找新的奈米材料，以供 實驗所需。 <br> Abstract: The primary goal of this project is to study nanoscale semiconductor that not only have distinct structures but also have unique physical properties. The project will establish the growth parameters to form various unique nanostructured semiconductors. Our unique synthetic approach will definitely lead to have novel physical properties. In order to have a complete understanding of the novel materials and obtain the underlying physical mechanisms, we will establish advanced equipments to characterize the nanoscale properties including structural, optical, electrical, mechanical, and magnetic measurements. Together with the experimental studies, in this joint grand proposal, we propose to perform quantum mechanical electronic structure and molecular dynamical calculations for semiconductor nanostructures. We will use fast ab initio order-N methods that we are developing and also high performance PC clusters. These calculations will also make specific predictions, which could be valuable guides to the experimentalists in searching for new semiconductor nanostructures with desired properties.