李嗣涔臺灣大學：電子工程學研究所黃皓銘Huang, Hao-MingHao-MingHuang2007-11-272018-07-102007-11-272018-07-102006http://ntur.lib.ntu.edu.tw//handle/246246/57685本論文研究藉由低壓化學氣相沉積法，以外加電場影響的方式，來成長具有固定生長方向的矽奈米線(SiNWs)，並進而藉由不同P型摻雜濃度來改變矽奈米線的電阻率，此外，利用四點量測的方式來分析矽奈米線的電阻率，提出矽奈米線應用於類比積體電路的可能性。Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteristics of SiNWs with different doping concentrations are measured by four-points probe method. The possibility of application of SiNWs to the analog circuit is proposed.Chapter 1 Introduction......................................................................................................1 Chapter 2 Experimental....................................................................................................4 2.1 Deposition .system........................................................................................................4 2.1.1 Low pressure chemical vapor deposition ( LPCVD )........................................4 2.1.2 Plasma Enhanced Chemical Vapor Deposition（PECVD）.............................4 2.2 Preparation...................................................................................................................9 2.3 Deposition Procedures.................................................................................................9 2.4 Devices Fabrication....................................................................................................10 2.5 Measurement Techniques..........................................................................................10 2.5.1 Current – Voltage characteristics......................................................................10 2.5.2 Thickness Measurement of buffer Oxide……………...………...……………11 Chapter 3 The Growth of Silicon Nanowires…………………………………………12 3.1 Vapor-Liquid-Solid (VLS) Mechanism………………………………………........13 3.2 Mechanism for SiNWs aligned with electric fields……………………………….16 3.3 Sample Preparation………………………………………………………………...18 3-4 Results and Discussion……………………………………………………………..24 3-4-1 Undoped silicon nanowires aligned with electric fields……………………..24 3-4-2 P-type silicon nanowires aligned with electric fields………………………...26 Chapter4 The I-V characteristic of SiNWs……………………………………………29 4.1 The four probes measurement of silicon nanowires……………………………...29 4.2 Sample preparation………………………………………………………………...31 4.3 Results and discussion……………………………………………………………...34 4.3.1 The electrical characteristics of undoped silicon nanowires……………..….34 4.3.2 The electrical characteristics of p-type silicon nanowires…………………...36 4.3.3 The resistivity of SiNWs versus bulk silicon………………………………….43 4.3.4 The contact resistance between metal Cr and SiNWs……………………….47 4.4 The application of SiNWs on present day semiconductor industry……………..50 Chapter 5 Conclusions………………………………………………………………….54 Reference………………………………………………………………………………..56 Appendix A Calculation………………………………………………………………...594533215 bytesapplication/pdfen-US矽奈米線silicon nanowiresthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57685/1/ntu-95-R93943149-1.pdf