Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation

G. S. LinJ. B. KuoJAMES-B KUO2018-09-102018-09-102005-10http://scholars.lib.ntu.edu.tw/handle/123456789/317640Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulationconference paper