Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers

CHEE-WEE LIUTzeng, P.J.P.J.TzengMaikap, S.S.MaikapLai, W.Z.W.Z.LaiLiang, C.S.C.S.LiangChen, P.S.P.S.ChenLee, L.S.L.S.LeeCHEE-WEE LIU2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-14844320813&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309365Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layersconference paper