Chen F.-S.Yang C.-Y.Sung J.-C.Lu C.-H.2019-05-132019-05-13201516874110https://scholars.lib.ntu.edu.tw/handle/123456789/407368In<inf>2</inf>Se<inf>3</inf> films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se<inf>2</inf> films via the spin-coating route. Selenizing the indium-containing precursors at 400¢XC resulted in the formation of the hexagonal £^-In<inf>2</inf>Se<inf>3</inf> with the preferred (006) orientation. Increasing the selenization temperature to 500¢XC yielded the (300)-oriented £^-In<inf>2</inf>Se<inf>3</inf>. Using the preferred (006)-oriented In<inf>2</inf>Se<inf>3</inf> as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se<inf>2</inf> film because of the crystalline symmetry. In contrast, the use of the (300)-oriented In<inf>2</inf>Se<inf>3</inf> as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se<inf>2</inf> films. According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se<inf>2</inf> films had a denser morphology and more favorable electrical properties. Using the (112)-oriented Cu(In,Ga)Se<inf>2</inf> films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency. ? 2015 Fu-Shan Chen et al.[SDGs]SDG7Gallium compounds; Indium compounds; Solar absorbers; Solar cells; Solar power generation; Absorber layers; Controlled orientation; Crystalline symmetry; Cu(In , Ga)Se2; Cu(In ,Ga)Se2 films; Photovoltaic characteristics; Seeding layers; Selenization temperatures; Selenium compoundsjournal article10.1155/2015/8021782-s2.0-84937785044https://www.scopus.com/inward/record.uri?eid=2-s2.0-84937785044&doi=10.1155%2f2015%2f802178&partnerID=40&md5=76ebc880792722d4bfc56a08c1557871