Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures

CHIH-CHUNG YANGLu, Y.-C.Y.-C.LuChen, C.-Y.C.-Y.ChenWang, H.-C.H.-C.WangYang, C.C.C.C.YangCheng, Y.-C.Y.-C.ChengCHIH-CHUNG YANG2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-34047092250&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/330325Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structuresjournal article10.1063/1.2711148