Chang, K.W.K.W.ChangLo, D.C.W.D.C.W.LoTan, K.L.K.L.TanStreit, D.D.StreitDow, G.S.G.S.DowAllen, B.R.B.R.AllenHUEI WANG2020-06-042020-06-041994https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027814113&partnerID=40&md5=a6c637abcbb8e88e15c8c582f31d3036A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 μm pseudomorphic AlGaAs/lnGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz. © 1993 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.Aluminum gallium arsenide; Gallium compounds; Electron transport properties; Frequency multiplying circuits; Gallium compounds; Mathematical models; Oscillators (electronic); AlGaAs/InGaAs/GaAs; Conversion loss; Doublers; GaAs HEMT; GHz frequencies; High electron-mobility transistors; Low-phase-noise; Monolithics; Output frequency; W bands; High electron mobility transistors; Field effect transistors; Electron mobility; Frequency quadrupler; Pseudomorphic technologyjournal article10.1109/75.2755862-s2.0-0028385454