2018-01-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/687015摘要：本計畫將在InP基板之上開發InAsP變晶技術，用以成長不具應變的InAsP/InGaAs PIN二極體之SWIR波段偵測器磊晶結構，交由委託單位供作SWIR 影像元件之用。變晶緩衝層的結構設計開發將為本計畫的研究重點。委託單位設定的第三年偵測波長為2.2μm。我們將依照偵測波長分別設計光偵測器InGaAs 吸收層的能隙與In 成分、再據以設計InAsP 變晶緩衝層結構，並以XRD、RSM、TEM 量測驗證變晶層結構之達成。完成之後，再把PIN 元件結構成長在緩衝層之上，進行初步的偵測器二極體製程，並量測偵測器的光頻譜反應以及暗電流以驗證磊晶結構之品質。我們將把結構設計交與磊晶廠完成磊晶晶片，交付與委託單位進行SWIR 影像元件之製作。<br> Abstract: This proposal aims at the development of epi-structures for short-wavelength-infrared (SWIR) PIN imaging devices. The detection wavelengths, requested by our cosigner, are 2.2 μm for the detector structures scheduled in third year of this proposal.InxGa1-xAs alloy with x>0.6 is suitable for active mediums for these detectors. However, there is no lattice-matched binary substrate. We propose to design and grow a metamorphic step-graded InAsP buffer layer on InP substrate to gradually enlarge the lattice constant so as to allow the InGaAs detectors grown strain-freely on top of the buffer layers. The buffer layers will be designed and grown for the target detection wavelength assigned each year. X-ray diffraction (XRD), reciprocal space mapping (RSM) as well as transmission electron microscopy (TEM) will be used to verify the validity of the design. Diode detectors will also be fabricated and their photo-responsivity as well as dark current density will be measured to verify the quality of the epi-structures. Finally, in each year, we will assign an epi-house to produce epi-wafers and deliver the wafers to our consigner – CSIST for the imaging device fabrication.短波長紅外線偵測器影像元件變晶緩衝層砷化銦鎵磷砷化銦short wavelength infraredphotodetectorimaging devicmetamorphic buffer layerInGaAsInAsP