Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substrates

Vin-Cent SuPo-Hsun ChenTa-Cheng HsuYu-Yao LinChieh-Hsiung KuanCHIEH-HSIUNG KUAN2019-10-312019-10-312017https://scholars.lib.ntu.edu.tw/handle/123456789/429864Enhanced Internal-Quantum Efficiency of GaN-based Light-Emitting Diodes with a Larger Post-Duty Cycle of Patterned-Sapphire Substratesconference paper10.1364/cleo_at.2017.am2b.52-s2.0-85044196511