指導教授：蘇國棟臺灣大學：光電工程學研究所廖建任Liao, Chien-JenChien-JenLiao2014-11-262018-07-052014-11-262018-07-052014http://ntur.lib.ntu.edu.tw//handle/246246/261948The uncooled infrared microbolometers have drawn significant attention for a variety of applications recently. Various fabrication processes and materials for microbolometer have been developed for past decades. In this paper, we designed an inkjet printing process to deposit cytochrome c protein on top of aluminum which is compatible with the standard CMOS process. The aluminum split structure is thermal insulated from the substrate by a SU-8 photoresist layer. The high temperature coefficient of resistance of cytochrome c thin film was suitable for infrared sensing. The 1/f noise value of the cytochrome c thin film was 3.04 × 〖10〗^(-11) V^2/Hz at 10 Hz. The measured voltage difference on the protein-based microbolometer with fabricated read-out integrated circuits was 0.32-0.46 Volts per 0.25°C increments. The calculated NETD value of optimized pixel is 0.246K. We believe that this approach provide an inexpensive and standard CMOS fabrication process to lower the high cost of microbolometers in future.口試委員會審定書...........................................................................................................# 致謝 1 中文摘要 3 ABSTRACT 4 CONTENTS 5 LIST OF FIGURES 8 LIST OF TABLES 11 Chapter 1 Introduction of Infrared Detectors 12 1.1 Infrared and Applications 12 1.2 Infrared Classification and Atmospheric Window 13 1.3 Blackbody Radiation 15 1.4 Photon Detectors 18 1.5 Thermal Detectors 19 1.5.1. Pyroelectric Infrared Detector 20 1.5.2. Microbolometer 21 1.5.3. Thermopile Infrared Detector 22 Chapter 2 Microbolometer 24 2.1 Figures of Merit 24 2.1.1. Temperature Coefficient of Resistance (TCR) 24 2.1.2. Responsivity 24 2.1.3. Noise Equivalent Temperature Difference (NETD) 25 2.1.4. Detectivity (D*) 26 2.1.5. Noise Equivalent Power (NEP) 27 2.2 Materials Used in Microbolometer 27 2.2.1. Vanadium Oxide (VOx) 28 2.2.2. Amorphous Silicon (α-Si) 28 2.2.3. Titanium (Ti) 29 2.2.4. Yttrium Barium Copper Oxide (YBaCuO) 29 2.2.5. Protein 30 2.3 Pixel Structure 30 2.3.1. Fill Factor 30 2.3.2. One-level Pixels Type 30 2.3.3. Two-level Pixels Type 32 Chapter 3 Experimental Motivation 34 3.1 CMOS-MEMS Technology 34 3.2 Cytochrome C 38 3.3 Inkjet Printer Technology 39 Chapter 4 Infrared Sensing Pixel and ROIC 41 4.1 Infrared Sensing Pixel of Cytochrome C Protein 41 4.1.1. Pixel Structure Design 41 4.1.2. Structure Fabrication 43 4.1.3. Inkjet Printing of Cytochrome C Protein 49 4.2 CMOS Readout Integrated Circuit 59 4.2.1. Circuit Design 59 4.2.2. Performance Simulation 61 Chapter 5 Experiment Results and Discussions 65 5.1 Protein Deposition Results 65 5.2 Measurement of Electrical Properties 68 5.3 Performance Optimization 71 Chapter 6 Conclusions and Future Work 75 Reference 77 Appendix 856385021 bytesapplication/pdf論文公開時間：2024/12/31論文使用權限：同意有償授權(權利金給回饋本人)微熱輻射感測器細胞色素C蛋白質電阻溫度係數壓電式噴墨機thesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/261948/1/ntu-103-R00941089-1.pdf