Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: Anomalous Raman shifts and transistors with high ON/OFF ratio

CHAO-HSIN WUWu, C.-R.C.-R.WuChang, X.-R.X.-R.ChangChang, S.-W.S.-W.ChangChang, C.-E.C.-E.ChangWu, C.-H.C.-H.WuLin, S.-Y.S.-Y.LinCHAO-HSIN WU2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84946100961&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/390974Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: Anomalous Raman shifts and transistors with high ON/OFF ratiojournal article10.1088/0022-3727/48/43/435101