Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

Shih, H.-Y.H.-Y.ShihShiojiri, M.M.ShiojiriChen, C.-H.C.-H.ChenYu, S.-F.S.-F.YuKo, C.-T.C.-T.KoYang, J.-R.J.-R.YangLin, R.-M.R.-M.LinJER-REN YANGMIIN-JANG CHEN2020-05-122020-05-122015https://scholars.lib.ntu.edu.tw/handle/123456789/491538Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDsjournal article10.1038/srep136712-s2.0-84940862281https://www.scopus.com/inward/record.uri?eid=2-s2.0-84940862281&doi=10.1038%2fsrep13671&partnerID=40&md5=0b56fb37bdd1bb8a1ddad58e87935636