Wu, Bing-RueyBing-RueyWuLin, Ching-FuhChing-FuhLinLaih, Lih-WenLih-WenLaihShih, Tien-TsorngTien-TsorngShih2009-03-182018-07-062009-03-182018-07-0620010277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/145920http://ntur.lib.ntu.edu.tw/bitstream/246246/145920/1/28.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0034784323&doi=10.1117%2f12.432620&partnerID=40&md5=507569276589228e69fa1a74b9b68e4fElectron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well (QW) InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be captured into QW two-dimensional (2D) states than hole does. The sequence of the nonidentical QWs is also shown to have significant influence on device characteristics.application/pdf344565 bytesapplication/pdfen-USCarrier concentration; Charge transfer; Semiconducting indium compounds; Carrier distribution; Quantum well lasersjournal article10.1117/12.4326202-s2.0-0034784323http://ntur.lib.ntu.edu.tw/bitstream/246246/145920/1/28.pdf