Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization

Chen, T.-Y.T.-Y.ChenPang, C.-S.C.-S.PangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84887349519&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/378076Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodizationjournal article10.1149/2.025309jss