Li Y.-YLin F.-ZChi K.-LWeng S.-YLee G.-YKuo H.-CCHIEN-CHUNG LIN2022-04-252022-04-25202219430655https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122306946&doi=10.1109%2fJPHOT.2021.3138946&partnerID=40&md5=df89ed4867d8ae8b9213452dd2a43c40https://scholars.lib.ntu.edu.tw/handle/123456789/606991This study fabricated and analyzed AlGaInP-based red micro-light-emitting diodes (LEDs) ranging from 2 to 15 μm in size. To collect photons from a single micro-LED at this scale, a solar cell chip near the micro-LEDs was used. Quantum efficiency decreased at a faster rate than that predicted by the standard ABC model under high currents, and a leakage current component was added to fully describe this phenomenon. The modified model can be used to extract valuable information regarding the micro-LEDs, such as the Shockley-Read-Hall coefficient. A size dependency analysis revealed that the bulk Shockley-Read-Hall coefficient and surface recombination velocity of the micro-LEDs were 6.81 × 107 1/sec and 5.99 × 104 cm/sec, respectively. Further analysis of the size-dependent recombination effect can help us solve the side wall problem and maximize the light output of AlGaInP-based micro-LEDs for ultrahigh-resolution displays. ? 2009-2012 IEEE.Displayleakage currentlight-emitting diodequantum well deviceradiative recombinationAluminum alloysEfficiencyGallium alloysIII-V semiconductorsIndium alloysLeakage currentsLightLight emitting diodesPassivationPhotovoltaic cellsQuantum efficiencySemiconductor alloysSemiconductor quantum wellsSolar cellsCell chipsCurrent leakageFaster ratesLightemitting diodeQuantum well deviceRadiative recombinationSemiconductor device measurementsSize dependentPhotoelectrochemical cells[SDGs]SDG7Analysis of Size-Dependent Quantum Efficiency in AlGaInP Micro-Light-Emitting Diodes with Consideration for Current Leakagejournal article10.1109/JPHOT.2021.31389462-s2.0-85122306946