An analysis of base bias current and intrinsic base resistance effects on InP-InGaAs, InGaP-GaAs, and SiGe heterojunction bipolar transistors

Lin, Y.-S.Y.-S.LinChen, C.-C.C.-C.ChenSHEY-SHI LU2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-33646883274&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/324107An analysis of base bias current and intrinsic base resistance effects on InP-InGaAs, InGaP-GaAs, and SiGe heterojunction bipolar transistorsjournal article10.1143/JJAP.45.3949