Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity

Dept. of Electr. Eng., National Taiwan Univ.Peng, Y.H.Y.H.PengChen, C.C.C.C.ChenKuan, C.H.C.H.KuanCheng, H.H.H.H.Cheng2007-04-192018-07-062007-04-192018-07-062002http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021039application/pdf324224 bytesapplication/pdfen-USGe quantum dots sandwiched between two thick Si blocking layers to increase high detectivityjournal article10.1109/CLEO.2002.1033622http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021039/1/01033622.pdf