Tung, C.-W.C.-W.TungKuo, T.-R.T.-R.KuoHsu, C.-S.C.-S.HsuChuang, Y.Y.ChuangChen, H.-C.H.-C.ChenChang, C.-K.C.-K.ChangChien, C.-Y.C.-Y.ChienLu, Y.-J.Y.-J.LuChan, T.-S.T.-S.ChanLee, J.-F.J.-F.LeeLi, J.-Y.J.-Y.LiJIUN-YUN LIHAO MING CHEN2020-06-112020-06-112019https://scholars.lib.ntu.edu.tw/handle/123456789/498463The integration of surface metal catalysts with semiconductor absorbers to produce photocatalytic devices is an attractive method for achieving high-efficiency solar-induced water splitting. However, once combined with a photoanode, detailed discussions of the light-induced processes on metal/semiconductor junction remain largely inadequate. Here, by employing in situ X-ray scattering/diffraction and absorption spectroscopy, the generation of a photoinduced adaptive structure is discovered at the interfacial metal–semiconductor (M–S) junction between a state-of-the-art porous silicon wire and nickel electrocatalyst, where oxygen evolution occurs under illumination. The adaptive layer in M–S junction through the light-induced activation can enhance the voltage by 247 mV (to reach a photocurrent density of 10 mA cm−2) with regard to the fresh photoanode, and increase the photocurrent density by six times at the potential of 1.23 V versus reversible reference electrode (RHE). This photoinduced adaptive layer offers a new perspective regarding the catalytic behavior of catalysts, especially for the photocatalytic water splitting of the system, and acting as a key aspect in the development of highly efficient photoelectrodes. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim[SDGs]SDG6[SDGs]SDG7Absorption spectroscopy; Chemical activation; Electrocatalysts; Metals; Nickel; Nickel metallography; Oxygen; Oxygen evolution reaction; Porous silicon; Silicon; Solar absorbers; X ray scattering; Light-induced process; Photo-anodes; Photocatalytic devices; Photocatalytic water splitting; Reference electrodes; Semiconductor absorbers; Situ x-ray scatterings; Water splitting; Semiconductor junctionsjournal article10.1002/aenm.2019013082-s2.0-85068910882https://www.scopus.com/inward/record.uri?eid=2-s2.0-85068910882&doi=10.1002%2faenm.201901308&partnerID=40&md5=c248e13d76de14acf46308145ac080c0