Tu C.-THuang Y.-SLu F.-LLiu H.-HLin C.-YLiu Y.-CCHEE-WEE LIU2021-09-022021-09-02201901631918https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081058169&doi=10.1109%2fIEDM19573.2019.8993537&partnerID=40&md5=bb372ed98b5d71cc687d342faf39598ehttps://scholars.lib.ntu.edu.tw/handle/123456789/580622Si incorporation as small as 2% into Ge can achieve sufficient etching selectivity of heavily phosphorus- doped Ge sacrificial layers over unintentionally doped Ge0.98Si0.02 to form two stacked Ge0.98Si0.02 nanowire channels, and introduce 0.27% uniaxial tensile strain for the electron mobility enhancement. The alloy scattering is still minimal for 2% Si. The parasitic Ge/Si channel underneath the Ge0.98Si0.02 channels is completely removed by optimized etching. The infrared response of the parasitic channel is a non-destructive method to further confirm the removal of the parasitic channel. VT can be tuned by PMA, and ION can be enhanced by short LG. Record ION of 48 μA at VOV=VDS=0.5V and record Q (Gm,max/SSSAT) of 8.3 at VDS=0.5V with LG = 40 nm are achieved among Ge nFETs. The results are comparable to Si nFETs. ? 2019 IEEE.Electron devices; Etching; Germanium; Ions; Nondestructive examination; Semiconductor alloys; Silicon; Tensile strain; Etching selectivity; Infrared response; Mobility enhancement; Nondestructive methods; Optimized etching; Phosphorus-doped; Sacrificial layer; Uniaxial tensile strain; Si-Ge alloysFirst Vertically Stacked Tensily Strained Ge<sub>0.98</sub>Si<sub>0.02</sub>nGAAFETs with No Parasitic Channel and L<sub>G</sub>= 40 nm Featuring Record I<sub>ON</sub>= 48 μA at V<sub>OV</sub>=V<sub>DS</sub>=0.5V and Record G<sub>m,max</sub>(μS/μm)/SS<sub>SAT</sub>(mV/dec) = 8.3 at V<sub>DS</sub>=0.5Vconference paper10.1109/IEDM19573.2019.89935372-s2.0-85081058169