Hung J.-CCheng Y.-TTsai J.-HTIAN-WEI HUANG2023-06-092023-06-092021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118178634&doi=10.1109%2fRFIT52905.2021.9565315&partnerID=40&md5=085fcde31b3963ef31ede071e2358bdbhttps://scholars.lib.ntu.edu.tw/handle/123456789/632314A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz. © 2021 IEEE.5G; Class-F; CMOS; millimeter-wave; Power amplifier[SDGs]SDG75G mobile communication systems; CMOS integrated circuits; Millimeter waves; Orthogonal frequency division multiplexing; Wave power; Class F power amplifier; Class-F; CMOS; CMOS power amplifiers; CMOS technology; Error vector; Higher speed applications; Ka band; Low supply voltages; Vector magnitude; Power amplifiersconference paper10.1109/RFIT52905.2021.95653152-s2.0-85118178634