Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

Chen, P.S.P.S.ChenLee, S.W.S.W.LeeLee, M.H.M.H.LeeLiu, C.W.C.W.Liu2009-03-252018-07-062009-03-252018-07-062008http://ntur.lib.ntu.edu.tw//handle/246246/148256application/pdf1347314 bytesapplication/pdfen-USFormation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixingjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148256/1/85.pdf