國立臺灣大學電信工程學研究所莊晴光2006-07-262018-07-052006-07-262018-07-052005-07-31http://ntur.lib.ntu.edu.tw//handle/246246/20325本計劃區隔三大類的CMOS 波導 設計，依工作頻率區分如下: (1) 介於DC 及fa 之間。 fa 為主動CMOS 合成波導 之工作上限頻率，以0.18μm CMOS 為 例約在5GHz。 在這種主動CMOS 合成 波導為週期結構，由單位細胞(cell)構成; 每一細胞由上下藕合之互補式金屬波導 形成 (Complementary-Conducting-Strips Waveguide; 中華民國專利公報中;美國 專利申請中); 而每一細胞都銜接上一主 動負電阻電路。 如此形成可能是已知波 導中在常溫無損耗的傳輸特性之第一 例。 (2)被動式毫米波CMOS 合成波 導，具最低工作頻率高於fp。以0.18μm CMOS 技術為例fp 約在60GHz。在當f > fp，CMOS 之增益不足以形成足夠好的 主動電路。 (3) 介於fa 及fp 之間的窄頻 主動式合成波導。 於此頻段負電阻電路 將被高效率但窄頻的微波電路取代。 本計劃涵蓋三年之長期研究，研發原 創性CMOS 合成波導而無需改變原有製 程。 其發展目標如下: (a) 微小化，無損 耗之主動合成波導工作在f < fp。 (b)多 元化空間且低損耗之合成波導及轉接電 路工作在f > fp。 (c)微小化其頻寬約10% 之低損耗之主動合成波導工作在fa< f < fp 之間。 本計劃雖屬基礎CMOS 合成 波導研究，不包含許多可能之應用研究， 仍將盡可能拓展合成波導在smart antenna 或RFIC 之設計。Advance in CMOS technology has positioned CMOS RFIC a dominant IC technology for transceiver block of RF signal processing, replacing the bipolar and GaAs-based IC technologies. Trend toward higher microwave and millimeter-wave regimes is expected for CMOS to take over what were dominated by the III-V technologies traditionally. The distributed waveguides, therefore, become indispensable for designing RF CMOS IC at higher microwave and millimeter-wave frequencies, since inter-stage matching is a necessity for optimal RF signal processing. Waves propagating in waveguides integrated on CMOS, however, suffer serious degradations in intolerably high attenuation constant and limited range of characteristic impedance. Both microstrip (MS) and coplanar waveguide (CPW), thus, found limited applications for CMOS RFIC designs. This proposal aims to resolve the above-mentioned issues that handicapped CMOS RFIC design from lower to higher microwave frequencies and beyond.synthetic CMOS waveguides covering DC to millimeter- wave frequencies to improving CMOS RF circuits and making new RFIC designs and applications. Three regimes of operation for synthesizing CMOS waveguides are specified. First, a broadband, DC to fa active CMOS waveguide is presented. The upper frequency limit of fa is 5GHz for a typical 0.18μm CMOS technology and fa will be higher when CMOS technology advances further to finer photolithography. The synthetic active CMOS waveguide is a periodical guiding structure made of a collection of unit cells, which consists of passive, synthetic complementary-conducting-strips (CCS) waveguide (ROC patent approved, US patent pending) and active negative differential resistance device. To our best knowledge, this is the world’s first guiding structure exhibiting loss-free characteristics. Second is the millimeter-wave CMOS waveguides above fp, which is the lower bound frequency of passive CMOS waveguides and is typically at 60GHz. Near fp current 0.18μm CMOS technology is stretched to limit, showing little gain available for RF integration. Thus attention will be focused on passive RF signal processing units on CMOS IC, above fp. Between fa and fp is a wide spectrum for a variety of microwave and millimeter-wave RF communication systems. In this regime, a synthetic active waveguide is proposed for narrowband applications. This proposal covers three years of continuing efforts on basic researches for CMOS waveguides. The targeted achievements include (a) synthetic, miniaturized, loss-free waveguides / transmission lines for f ∈ (0, fa), (b) synthetic, multi-dimensional, low-loss waveguides and transitions for f > fp, (c) synthetic, narrowband, low-loss, active waveguide for f ∈ (fa, fp). Applications of the synthetic active/passive CMOS waveguides are numerous and not included in the scope of this proposal. When applicable, however, the conducted researches may generate useful results for smart antenna and RFIC designs, etc. The researches are evenly distributed into a three-year period. Year 1 will focus on general design considerations of synthetic CMOS waveguides for f ∈ (0, fa) and f > fp. Year 2 will emphasize on synthetic CMOS waveguides for f ∈ (fa, fp) and continue the researches on the other bands. Year 3 intends to design transmission line/waveguide circuits that will demonstrate the applicability of concepts of synthetic CMOS waveguides from lower microwave frequencies to millimeter-wave regime.application/pdf296803 bytesapplication/pdfzh-TW國立臺灣大學電信工程學研究所CMOS 合成波導互補式金屬波導Synthetic CMOS waveguidesComplementary -conducting-stripsreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/20325/1/932213E002136.pdf