Tsai, Hsin-HungHsin-HungTsaiJIUN-HAW LEEMAN-KIT LEUNG2009-03-182018-07-062009-03-182018-07-0620050277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/145873https://www.scopus.com/inward/record.uri?eid=2-s2.0-31744444871&doi=10.1117%2f12.618897&partnerID=40&md5=8e754e272a23c8a75ff1c45ea37cc5aeIn this paper, we demonstrate a phosphorescent organic light emitting device (PHOLED) with low turn-on voltage by using a n-type organic material as the host of the emitting layer (EML) doped with green emitting complex, fac tris(2-phenylpyridine) iridium Ir(ppy)3. This material exhibits high glass transition temperature (over 200°C) that may help to elongate the operation lifetime. We compare our devices to the classical 4,4'-N,N'-dicarbazole-biphenyl (CBP) based green device. Driving voltage of the CBP and the new-host based OLED is 16 and 11 V with the current density of 100mA/cm2, respectively. The lower driving voltage of the new-host based device comes from the lower HOMO value, i.e. 5.7 eV, which is nearly the same as that of NPB. The current efficiency at 10000 cd/m2 is slightly decreased from 24 to 21 cd/A. However, the power efficiency is increased from 5 to 6 lm/W.application/pdf319526 bytesapplication/pdfen-USOLED; Phosphorescent[SDGs]SDG7Current density; Electric potential; Glass transition; Organic compounds; Phosphorescence; Current efficiency; Organic light-emitting devices (OLED); Light emitting diodesconference paper10.1117/12.6188972-s2.0-31744444871http://ntur.lib.ntu.edu.tw/bitstream/246246/145873/1/25.pdf