Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET

Lin, T.D.T.D.LinChang, P.P.ChangWu, Y.D.Y.D.WuChiu, H.C.H.C.ChiuKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443362[SDGs]SDG7Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFETjournal article10.1016/j.jcrysgro.2010.12.0792-s2.0-79958005257https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958005257&doi=10.1016%2fj.jcrysgro.2010.12.079&partnerID=40&md5=e73b8312325c06452caef70c5b58af46