Patel D.KPatel D.KMarzano MMarzano MLiu C.-ILiu C.-IKruskopf MKruskopf MElmquist R.ECHI-TE LIANGRigosi A.F.2021-07-282021-07-282020223727https://www.scopus.com/inward/record.uri?eid=2-s2.0-85087329855&doi=10.1088%2f1361-6463%2fab8d6f&partnerID=40&md5=4b24a1ef01224b4253e2e054a7acb0d4https://scholars.lib.ntu.edu.tw/handle/123456789/573422Measurements of fractional multiples of the v=2plateau quantized Hall resistance ((RH ? 12 906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction (pnJ) devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of pnJ fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography. ? 2020 IOP Publishing Ltd.Circuit simulation; Electric resistance measurement; Graphene; Graphene devices; Quantum Hall effect; Semiconductor junctions; Circuit simulators; Efficient process; Graphene p-n junctions; Lateral directions; Multiple currents; Quantized Hall resistance; Quantum Hall resistance; Ultraviolet lithography; Hall effect devices[SDGs]SDG9journal article10.1088/1361-6463/ab8d6f2-s2.0-85087329855