GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Tseng, H. H.H. H.TsengLi, H.H.LiMashanov, V.V.MashanovYang, Y. J.Y. J.YangCheng, H. H.H. H.ChengChang, G. E.G. E.ChangSoref, R. A.R. A.SorefSun, G.G.SunYAO-JOE YANG2020-01-132020-01-1320130003-6951, 1077-3118https://scholars.lib.ntu.edu.tw/handle/123456789/448564[SDGs]SDG7GeSn-based p-i-n photodiodes with strained active layer on a Si waferjournal article10.1063/1.4840135http://aip.scitation.org/doi/10.1063/1.4840135