2016-08-012024-05-15https://scholars.lib.ntu.edu.tw/handle/123456789/664939摘要：隨著行動裝置與物聯網的普及，開發微電子的省電裝置元件，也變得越來越重要。美商英特爾已經在去年推出了14 奈米FinFET元件，台灣積體電路公司與三星電子也會分別在今年推出16 奈米和14 奈米FinFET元件代工服務。由此可見三維立體FinFET元件已經是主流，然而隨著元件的尺寸不斷的微縮，國際上有許許多多不同的元件結構被提出來，例如: 水平式的奈米線、垂直式的奈米線等等。 本計畫目標是在於提出一個嶄新的立體式半導體結構: 奈米管，他比奈米線具有更好的短通道校應與漏流特性，奈米環中的中空式結構可以將傳統奈米線控制不到的中間載子去除，進而確保所有載子在奈米環中移動均受到外圍閘極的電壓控制，最終達到最好的短通道效應控制與漏流特性。 此計畫是以申請人在2014年二篇VLSI-technology 頂尖國際會議論文為基底 (台灣大學創校以來，首度有論文被接受，且難得的是同時同一年度二篇論文，榮登台灣大學首頁專題報導)，衍伸希望能夠開發次世代的半導體電晶體省電元件，提出創新性想法，以期在三維FinFET元件結構後，更近一步的提出未來電子元件的可行方案，和更進一步的效能提升。 <br> Abstract: Due to the requirement of the mobile device and the development of the internet of thing (IOT) in the recent years, the advanced semiconductor device with the low power operation is needed urgently. Following the Moore’s law, the international company such as Intel, Samsung, and TSMC has successfully developed the 14/16 nm technology node product in recent two years on the 3D FinFET device structure. With the continuous device dimension scaling, different kinds of device structures such as lateral nano-wire and vertical nano-wire are provided and discussed a lot recently. In this research proposal, we plan to propose one novel device structure: nano-tube. The hollow structure in the proposed nano-tube device has the capability to screen out the center out-off gate controlled carriers in the original nano-wire device and the benefit the device short channel control/device performance. With the better short channel control, the dimension of the nano-tube/original nano-wire devices has the design window to be en-larged and the mobility in the device can be increased due to the less surface roughness scattering. The proposed nano-tube device, with the hollow structure, has the better Ion state and Ioff state characteristics than it in the original nano-wire device. We deeply believe that this proposed nano-tube structure will become the mainstream device structure in the near future.次世代綠能半導體省電元件Next generation green semiconductor device