Cheng I.-C.Chen J.Z.JIAN-ZHANG CHEN2019-09-262019-09-26200817387558https://scholars.lib.ntu.edu.tw/handle/123456789/425244Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of 150¢XC show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.Amorphous siliconPlastic substrateThin film transistorconference paper2-s2.0-65649126094https://www2.scopus.com/inward/record.uri?eid=2-s2.0-65649126094&partnerID=40&md5=21c56e7759ceca49f3ceae7396c61b63