High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation

Pi, T.-W.T.-W.PiHuang, M.L.M.L.HuangLee, W.C.W.C.LeeChu, L.K.L.K.ChuLin, T.D.T.D.LinChiang, T.H.T.H.ChiangWang, Y.C.Y.C.WangWu, Y.D.Y.D.WuMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443373[SDGs]SDG6High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiationjournal article10.1063/1.35517262-s2.0-79951804801https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951804801&doi=10.1063%2f1.3551726&partnerID=40&md5=817abc42edba2f39b425604544290985