Device-level transient analysis of a 1 μm six-transistor BiCMOS inverter circuit using a large-scale quasi-3D device simulator

Dept. of Electr. Eng., National Taiwan Univ.Kuo, J.B.J.B.KuoChen, Y.W.Y.W.ChenKuoJB2007-04-192018-07-062007-04-192018-07-061991-09http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032266application/pdf223594 bytesapplication/pdfen-USDevice-level transient analysis of a 1 μm six-transistor BiCMOS inverter circuit using a large-scale quasi-3D device simulatorjournal article10.1109/BIPOL.1991.160965http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032266/1/00160965.pdf