Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | MINGHWEI HONG ; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | MRS Proceedings | |||
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | |||
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | Journal of Vacuum Science & Technology B | |||
2002 | Single-crystal GaN/Gd2O3/GaN heterostructure | MINGHWEI HONG ; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI | Journal of Vacuum Science & Technology B |