公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2008 | Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy | H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2013 | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN | Applied Physics Express | 15 | ||
2010 | Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN | Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN | Applied Physics Letters | 12 | ||
2007 | Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects | Y. C. Wen; L. C. Chou; H. H. Lin; V. Gusev; K. H. Lin; CHI-KUANG SUN ; HAO-HSIUNG LIN ; CHI-KUANG SUN | Applied Physics Letters | |||
2012 | Electron transport in a GaPSb film | S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; CHI-TE LIANG ; HAO-HSIUNG LIN | Nanoscale Research Letters | 5 | ||
2013 | GaAsPSb and its application to heterojunction bipolar transistors | Y. C. Chin; H. H. Lin; H. S. Guo; C. H. Huang; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | |||
2005 | GaAsSb/GaAs quantum wells grown by MBE | H. H. Lin; P. W. Liu; C. L. Tsai; G. H. Liao; J. Lin; HAO-HSIUNG LIN | MBE Taiwan 2005 | |||
2003 | GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser | H. H. Lin; P. W. Liu; J. R. Chen; HAO-HSIUNG LIN | Sixth Chinese Optoelectronics Symposium | |||
2003 | GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers | H. H. Lin; P. W. Liu; G. H. Liao; HAO-HSIUNG LIN | electron devices and materials symposium | |||
2004 | GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes | H. H. Lin; P. W. Liu; G. H. Liao; C. L. Tsai; HAO-HSIUNG LIN | MBE Taiwan | |||
2001 | Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | |||
2014 | Hierarchically Assembled Microspheres Consisting of Nanosheets of Highly Exposed (001)-Facets TiO2 for Dye-Sensitized Solar Cells, | J. D. Peng; C. T. Lee; H. H. Lin; C. M. Tseng; K. C. Ho | ||||
2010 | In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | ||
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m | Ding-Kang Shih; H. H. Lin; Y. H. Lin; HAO-HSIUNG LIN | Electronics Letters | 37 | ||
2001 | InAsN Grown by Plasma-assisted Gas Source MBE | D. K. Shih; H. H. Lin; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN | 2001 MRS Fall meeting, Symposium H | |||
1999 | InAsN quantum wells grown on InP by gas source MBE | J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN | 3rd international conference on mid-infrared optoelectronics materials and devices | |||
2013 | Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001) | D. N. Talwar; T. R. Yang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | Applied Physics Letters | |||
2012 | InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | IEEE Electron Device Letters | 4 | ||
2010 | Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy | Y. R. Lan; C. J. Wu; H. H. Lin; T. S. Chan; Z. C. Feng; HAO-HSIUNG LIN | MBE Taiwan 2010 | |||
2013 | Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes | C. X. Wang; Y. T. He; M. T. Niu; J. Y. Yao; E. Jones; Z. R. Qiu; X. Zhang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium |