公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1992 | Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001) | Liou, SH; Malhotra, SS; Shen, JX; MINGHWEI HONG ; Kwo, J; Chen, HS; Mannaerts, JP | Journal of Applied Physics | | | |
1993 | Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) | Liou, S. H.; Malhotra, SS; Shen, JX; MINGHWEI HONG ; Kwo, J; Chen, HS; Mannaerts, JP | Journal of Applied Physics | | | |
1990 | Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy | Kwo, J; MINGHWEI HONG ; Fulton, TA; Gammel, PL; Mannaerts, JP | 1989 Microelectronic Intergrated Processing Conferences | | | |
1992 | MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers | MINGHWEI HONG ; Wu, MC; Chen, YK; Mannaerts, JP; Chin, MA | Journal of electronic materials | | | |
1991 | MBE growth and properties of Fe 3 (Al, Si) on GaAs (100) | MINGHWEI HONG ; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC | Journal of Crystal Growth | | | |
1992 | Modulation characteristics of GaAs surface-emitting lasers with bulk active regions | Gamelin, J; Lin, J; Wang, S; MINGHWEI HONG ; Mannaerts, JP | Conference on Lasers and Electro-Optics | | | |
1992 | Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures | Choquette, Kent D; MINGHWEI HONG ; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE | Applied Physics Letters | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; MINGHWEI HONG ; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others | APS Meeting Abstracts | | | |
2001 | New phase formation of Gd2O3 films on GaAs (100) | Kortan, AR; MINGHWEI HONG ; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M | Journal of Vacuum Science & Technology B | | | |
1997 | Novel Ga 2 O 3 (Ga 2 O 3) passivation techniques to produce low D it oxide-GaAs interfaces | MINGHWEI HONG ; Mannaerts, JP; Bower, JE; Kwo, J; Passlack, M; Hwang, W-Y; Tu, LW | Journal of Crystal Growth | | | |
1996 | Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M; MINGHWEI HONG ; Mannaerts, JP | Electronics Letters | | | |
2002 | Optical properties of gallium oxide thin films | Rebien, M; Henrion, W; MINGHWEI HONG ; Mannaerts, JP; Fleischer, M | Applied Physics Letters | | | |
2003 | Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs | Lin, Hung-Cheng; Senanayake, Sidat; Cheng, Keh-Yung; MINGHWEI HONG ; Kwo, J Raynien; Yang, Bin; Mannaerts, JP | IEEE Transactions on Electron Devices | | | |
1998 | Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance | Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; MINGHWEI HONG ; Mannaerts, JP; Kwo, J; others | Journal of Applied Physics | | | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; MINGHWEI HONG ; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL | Applied Physics Letters | | | |
1992 | Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy | MINGHWEI HONG ; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA | Applied Physics Letters | | | |