公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1986 | Evalution of DX-Center in Sn-Doped AlxGa1-xAs | Lee, H. C.; Lee, Si-Chen ; Lin, Hao-Hsiung ; Hwang, F. C. | The 12th EDMS | | | |
2012 | Evidence of nitrogen reorganization in GaAsSbN alloys | H. P. Hsu; Y. T. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics. | | 7 | |
2019 | Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition | Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
1981 | Excess Leakage Current of a Rectifier Diode | Pai, P. L.; Hwang, C. C.; Chen, M. K.; 林浩雄 ; Chiou, Y. L.; Lin, Hao-Hsiung | 7th EDMS | | | |
2011 | Extended X-ray absorption fine structure of InAsPSb | C. J. Wu; G. Tsai; Z. C. Feng; HAO-HSIUNG LIN | 23rd international conference on indium phosphide and related materials (IPRM 2011) | | | |
2011 | Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs | C. J. Wu; K. T. Chen; Z. C. Feng; HAO-HSIUNG LIN | 38th international symposium on compound semiconductors (ISCS 2011) | | | |
1998 | An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor | Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung | Superlattices and Microstructures | 7 | 7 | |
1989 | Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design | Ting, Jing-Lung; 林浩雄 ; 李嗣涔 ; Lin, Hao-Hsiung ; Lee, Si-Chen | 15th EDMS | | | |
2003 | Femtosecond carrier dynamics in InGaAsN single quantum well | Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C.; Sung, L.-W.; Sun, Chi-Kuang ; Lin, Hao-Hsiung | CLEO/Pacific Rim 2003 | 0 | 0 | |
2018 | First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAs<inf>x</inf>P<inf>y</inf>Sb<inf>1-x-y</inf> system | Robouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN | Journal of Alloys and Compounds | | | |
1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
Dec | A fully integrated broadband amplifier with 161% 3-dB bandwidth | Wu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung | Asia-Pacific Microwave Conference, 2001. APMC 2001 | 0 | 0 | |
2009 | GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer | Y. R. Lin; Y. F. Lai; C. P. Liu; HAO-HSIUNG LIN | Applied Physics Letters | | 2 | |
2000 | GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer | Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung | Materials Science and Engineering B | 2 | 1 | |
2002 | GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs | Wu, Wen-Chieh; Lin, Hao-Hsiung | Electronics Letters | | | |
2002 | GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs | W. C. Wu; H. Wang; HAO-HSIUNG LIN | Electronics Letters | | 1 | |
2009 | GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer | Y. R. Lin, H. H. Lin; J. H. Chu; HAO-HSIUNG LIN | Electronics Letters | | 7 | |
2013 | GaAsPSb and its application to heterojunction bipolar transistors | Y. C. Chin; H. H. Lin; H. S. Guo; C. H. Huang; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | | | |
2005 | GaAsSb/GaAs quantum wells grown by MBE | H. H. Lin; P. W. Liu; C. L. Tsai; G. H. Liao; J. Lin; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2003 | GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser | Lin, Hao-Hsiung ; Liu, Po-Wei; Chen, Jhe-Ren | Optoelectronics | 0 | 0 | |