公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | Band Gap Reduction in InAsN Alloys | D. K. Shih; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN | Japanese Journal of Applied Physicsic | 67 | 65 | |
2008 | Band structure of dilute nitride GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | 2008 International electron devices and materials symposia | | | |
1995 | Birefringence of Passive Multi-Quantum-Well Semiconductor Slab Waveguides | Yang, C.C.; Kang, J.; Stegeman, G.I.; Huang, C.-H.; Li, D.-U.; Lin, H.-H.; CHIH-CHUNG YANG ; HAO-HSIUNG LIN | IEEE Photonics Technology Letters | 9 | 9 | |
1994 | Birefringence of Passive Semiconductor Slab Waveguides | Li, D. U.; Huang, Chang-Hsiu; 張宏鈞 ; 林浩雄 ; Yang, C. C.; Kang, J.; Stegeman, G. L.; Chang, Hung-Chun ; Lin, Hao-Hsiung | Ultrfast Optics and Applications Conference | | | |
2014 | Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure | C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; HAO-HSIUNG LIN | 21th Symposium on nano device technology | | | |
2012 | Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs | C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; HAO-HSIUNG LIN ; CHIH-CHUNG YANG | Applied Physics Letters | | 8 | |
1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 8th EDMS | | | |
1997 | Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy | Hwang, J.S.; Chou, W.Y.; Hung, M.C.; Wang, J.S.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
2022 May | Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy | Shih, Ding-Kang; Lin, Hao-Hsiung ; Song, Li-Wei; Chu, Tso-Yu; Yang, T.R. | IEEE International Conference On Indium Phosphide and Related Materials, 2001. | 0 | 0 | |
2007 | Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10 | I. C. Chen; G. Tsai; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
1988 | The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | Applied Physics Letters | | | |
1987 | Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source | Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 9 | |
1987 | The Characteristics of Silane Doping of GaAs by MOCVD | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | 13th EDMS | | | |
2009 | Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN | T. C. Ma; HAO-HSIUNG LIN | MBE Taiwan 2009 | | | |
2008 | Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells | T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 30 | 28 | |
2007 | Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy | Lee, C. H.; Huang, Y. S.; Wang, J. S.; Chan, C. H.; HAO-HSIUNG LIN | Journal of Applied Physics. | 9 | 10 | |
1998 | Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy | Chan, C.H.; Chen, M.C.; Lin, H.H.; Chen, Y.F.; Jan, G.J.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 23 | 24 | |
2003 | Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique | M.-H. Mao; D.-M. Yeh; P.-W. Liu; H.-L. Chen; C.-T. Pan; HAO-HSIUNG LIN | The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003 | 0 | 0 | |
2006 | Coherent acoustic phonon oscillation in (111) InGaAs/GaAs MQWs with piezoelectric fields | Y. C. Wen; L. C. Chou; H. H. Lin; K. H. Lin; C. Y. Chen; CHI-KUANG SUN ; HAO-HSIUNG LIN | OPT2006 | | | |
2011 | Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells | J. M. Lin; L. C. Chou; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | 5 | |