公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Stimulated emission in a nanostructured silicon pn junction diode using current injection | Chen, M.J.; Yen, J.L.; Li, J.Y.; Chang, J.F.; Tsai, S.C.; MIIN-JANG CHEN | Applied Physics Letters | 115 | 99 | |
2010 | Stimulated Emission in Highly (0001)-Oriented ZnO Films Grown by Atomic Layer Deposition on the Amorphous Glass Substrates | Shih, Y.T.; Chiu, C.Y.; Chang, C.W.; Yang, J.R.; Shiojiri, M.; JER-REN YANG ; MIIN-JANG CHEN | Journal of The Electrochemical Society | 8 | 7 | |
2015 | The strain dependence of Ge<inf>1 - x</inf>sn<inf>x</inf> (x = 0.083) Raman shift | Chang, C.; Li, H.; Chen, T.-P.; Tseng, W.-K.; Cheng, H.; Ko, C.-T.; Hsieh, C.-Y.; Chen, M.-J.; Sun, G.; MIIN-JANG CHEN | Thin Solid Films | | | |
2013 | Structural analysis of Au/TiO<inf>2</inf>thin films deposited on the glass substrate | Kawasaki, M.; Chen, M.-J.; Yang, J.-R.; Chiou, W.-A.; JER-REN YANG ; MIIN-JANG CHEN | Applied Physics Letters | 11 | 9 | |
2011 | Structural and photoluminescence properties of ZnO films grown on 6H-SiC substrates by low-temperature atomic layer deposition | Lin, M.-C.; Wu, M.-K.; Yuan, K.-Y.; Chen, M.-J.; Yang, J.-R.; JER-REN YANG ; MIIN-JANG CHEN | Journal of the Electrochemical Society | 2 | 2 | |
2011 | STRUCTURAL INVESTIGATION OF n-ZnO/p-GaN ULTRAVIOLET LIGHT-EMITTING DIODES GROWN BY ATOMIC LAYER DEPOSITION | Li, W.C.; Tsai, H.L.; Chen, H.C.; Wu, M.K.; Chen, H.R.; Chen, M.J.; Yang, J.R.; JER-REN YANG ; MIIN-JANG CHEN | Functional Materials Letters | 3 | 3 | |
2010 | Structure and Electro-Optical Properties of Thin Films Grown by Alternate Atomic Layer Deposition of ZnO and Al2O3 on the Sapphire Substrate | Ceh, Miran; Chen, Hsing-Chao; Chen, Miin-Jang ; Yang, Jer-Ren ; Shiojiri, Makoto | Materials Transactions | 19 | 15 | |
2010 | Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate | Chen, H.C.; Liu, T.C.; Shiojiri, M.; JER-REN YANG ; MIIN-JANG CHEN | Thin Solid Films | | | |
2010 | The structure and ultraviolet electroluminescence of n-ZnO-SiO 2-ZnO nanocomposite/p-GaN heterojunction LED | Tsai, H.L.; Li, W.C.; Chen, M.J.; Shiojiri, M.; JER-REN YANG ; MIIN-JANG CHEN | ECS Transactions | 2 | 0 | |
2010 | Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes | Chen, Miin-Jang ; Shih, Ying-Tsang; Wu, Mong-Kai; Chen, Hsing-Chao; Tsai, Hung-Ling; Li, Wei-Chih; Yang, Jer-Ren ; Kuan, Hon; Shiojiri, Makoto | IEEE Transactions on Electron Devices | 13 | 12 | |
2010 | A study of atomic layer deposited LiAlxOy films on Mg-Li alloys | Wang, P.C.; Shih, Y.T.; Lin, M.C.; Lin, H.C.; Chen, M.J.; HSIN-CHIH LIN ; MIIN-JANG CHEN | Thin Solid Films | | | |
2023 | Study of Atomic Layer Deposition Nano-Oxide Films on Corrosion Protection of Al-SiC Composites | Chen, Hou Jen; Chen, Ying Chu; Lin, Pi Chen; Lin, Kaifan; Lin, Jonathan C.; MIIN-JANG CHEN ; HSIN-CHIH LIN | Materials | 1 | 0 | |
2021 | Sub-7-nm textured ZrO2 with giant ferroelectricity | Huang K.-W; Yi S.-H; Jiang Y.-S; Kao W.-C; Yin Y.-T; Beck D; Korolkov V; Proksch R; Shieh J ; MIIN-JANG CHEN | Acta Materialia | 23 | 17 | |
2020 | Sub-nanometer heating depth of atomic layer annealing | Lee, W.-H.; Kao, W.-C.; Yin, Y.-T.; Yi, S.-H.; Huang, K.-W.; Lin, H.-C.; Chen, M.-J.; HSIN-CHIH LIN ; MIIN-JANG CHEN | Applied Surface Science | | | |
2019 | Suppression of GeO x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices | Wang C.-I.; Chang T.-J.; Wang C.-Y.; Yin Y.-T.; Shyue J.-J.; HSIN-CHIH LIN ; MIIN-JANG CHEN | RSC Advances | 5 | 5 | |
2016 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure | Wang W.-C.; Tsai M.-C.; Lin Y.-P.; Tsai Y.-J.; Lin H.-C.; HSIN-CHIH LIN ; MIIN-JANG CHEN | Materials Chemistry and Physics | 5 | 5 | |
2021 | Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography | Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN | Journal of Materials Chemistry C | | | |
2018 | Suppression of short channel effects in FinFETs using crystalline ZrO<inf>2</inf> high-K/Al<inf>2</inf>O<inf>3</inf> buffer layer gate stack for low power device applications | Tsai, M.-C.; Wang, C.-I.; Chen, Y.-C.; Chen, Y.-J.; Li, K.-S.; Chen, M.-C.; Chen, M.-J.; MIIN-JANG CHEN | Semiconductor Science and Technology | | | |
2012 | Surface enhanced Raman scattering and localized surface plasmon resonance of nanoscale ultrathin films prepared by atomic layer deposition | Lin, Ming Chih; Nien, Li-Wei; Chen, Ching-Hsiang; Lee, Chia-Wei; Chen, Miin-Jang | Applied Physics Letters | 14 | 13 | |
2013 | Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition | Wang, W.-C.; Lin, C.-W.; Chen, H.-J.; Chang, C.-W.; Huang, J.-J.; Yang, M.-J.; Tjahjono, B.; Huang, J.-J.; Hsu, W.-C.; Chen, M.-J.; MIIN-JANG CHEN | ACS Applied Materials and Interfaces | | | |