公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser | H. H. Lin; P. W. Liu; J. R. Chen; HAO-HSIUNG LIN | Sixth Chinese Optoelectronics Symposium | | | |
2003 | GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers | H. H. Lin; P. W. Liu; G. H. Liao; HAO-HSIUNG LIN | electron devices and materials symposium | | | |
2004 | GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes | H. H. Lin; P. W. Liu; G. H. Liao; C. L. Tsai; HAO-HSIUNG LIN | MBE Taiwan | | | |
2007 | GaAsSb/GaAs量子結構與元件(2/2) | 林浩雄 | | | | |
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma; T. Y. Chen; S. K. Chang; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen; T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | | | |
1994 | Gas source MBE growth of InP under in-rich conditions | Lee, T.-L.; Liu, J.-S.; HAO-HSIUNG LIN | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | | | |
1995 | Gas Source MBE Growth of InP Under In-Rich Conditions | Lee, T. L.; Liu, J. S.; 林浩雄 ; Lin, Hao-Hsiung | 1994 International Electron Devices and Materials Symposium | | | |
1996 | Gas source molecular beam epitaxial growth model for Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> on GaAs | Liu, J.-S.; Lee, T.-L.; HAO-HSIUNG LIN | Optical and Quantum Electronics | | | |
2016 | Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP | Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; HAO-HSIUNG LIN | Journal of Applied Physics | | | |
2013 | Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate | H. M. Wu; Y. J. Yang; HAO-HSIUNG LIN | TACT 2013 international thin films conference | | | |
2002 | Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds | Chiu, Y.S.; Ya, M.H.; Su, W.S.; Chen, T.T.; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 5 | 5 | |
2002 | Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser | P.-W. Liu; M.-H. Lee; HAO-HSIUNG LIN | The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society | | | |
1996 | Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy | Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung | Solid-State Electronics | 3 | 3 | |
2000 | Growth and characterization of InAsN alloys | Wang, Jyh-Shyang; Lin, Hao-Hsiung ; Sung, Li-Wei; Chen, Guan-Ru | 2000 International Conference on Indium Phosphide and Related Materials | 0 | 0 | |
1999 | Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy | J. S. Wang; G. R. Chen; L. W. Sung; HAO-HSIUNG LIN | Optics and Photonics/Taiwan'99 | | | |
2002 | Growth and characterization of low-threshold 1.3μm GaAsSb quantum well laser | Liu, Po-Wei; Lee, Min-Han; Lin, Hao-Hsiung | The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society | | | |
2001 | Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well | M. H. Lee; P. W. Liu; HAO-HSIUNG LIN | 2001 Electron Devices and Materials Symposia | | | |
1999 | Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy | Wang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2017 | Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO<inf>2</inf>/Si nano-trench | Chen, W.-C.; Chen, L.-H.; Lin, Y.-T.; HAO-HSIUNG LIN | Journal of Crystal Growth | 0 | 0 | |