公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | | | |
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | | | |
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | | | |
1991 | A structured adaptive neural network for pattern recognition VLSI | Kuo, J.B.; Wong, E.J.; Chen, C.C.; Hsiao, C.C.; KuoJB | IEEE International Sympoisum on Circuits and Systems, 1991 | 0 | 0 | |
2002 | Sub-1V CMOS Large Capacitive-Load Driver Circuit Using Direct Bootstrap Technique for Low-Voltage CMOS VLSI | P. C. Chen; JAMES-B KUO | Electronics Letters | 21 | 19 | |
2018 | A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device | Wang B; Wang Z; JAMES-B KUO | IEEE Journal of the Electron Devices Society | | | |
2014 | Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects | D. H. Lung; J. B. Kuo; JAMES-B KUO | EUROSOI | | | |
1991 | SUN 4/330工作站, (80-0404-E002-43, BiCMOS元件/電路模擬器) | 郭正邦 | | | | |
1999 | Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices | S. C Lin; JAMES-B KUO | IEEE Transactions on Electron Devices | 32 | 25 | |
2002 | The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure | J. B. Kuo; S. C. Lin; JAMES-B KUO | Hong Kong Electron Devices Meeting | 2 | 0 | |
2008 | Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects | J. S. Su; J. B. Kuo; JAMES-B KUO | IEDMS | | | |
2004 | Trends on CMOS VLSI | JAMES-B KUO | International Meeting on Nanotechnology | | | |
2007 | Triple Threshold Static Power Minimization in High-Level Synthesis of VLSI CMOS | H. Chen; J. B. Kuo; M. Syrzycki; JAMES-B KUO | Power and Timing Modeling and Optimization Conf (PATMOS) | | | |
2007 | Triple-Threshold Static Power Minimization Technique in High-Level Synthesis for Designing High-Speed Low-Power SOC Applications Using 90nm MTCMOS Technology | H. I. Chen; E. K. Loo; J. B. Kuo; M. J. Syrzycki; JAMES-B KUO | Canadian Conference on Electrical and Computer Engineering | 7 | 0 | |
1995 | Turn-off transient analysis of a double diffused metal-oxide-semiconductor device considering quasi saturation | Liu C.-M; JAMES-B KUO | Japanese Journal of Applied Physics | 5 | 1 | |
2019 | Turn-OFF transient analysis of superjunction IGBT | Wang, Z.; Zhang, H.; JAMES-B KUO | IEEE Transactions on Electron Devices | | | |
2012 | Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect | S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO | Eurosoi Conference | | | |
2013 | Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Electron Devices and Material Symposium | | | |
2013 | Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect | D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO | International Semiconductor Devices Research Symposium | | | |
1990 | Turn-on transient imposed extrinsic base consideration in BiNMOS transistors | Chen, Yen-Wen; Kuo, James | Custom Integrated Circuits Conference, 1990. | 0 | 0 | |