公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors | CHEE-WEE LIU ; Lan, H.-S.; CHEE-WEE LIU | Applied Physics Letters | | | |
2017 | Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces | CHEE-WEE LIU ; Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | | | |
2017 | Band calculation of lonsdaleite Ge | CHEE-WEE LIU ; Chen P.-S; Fan S.-T; Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | | | |
2004 | Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers | Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | 34 | 32 | |
2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | CHEE-WEE LIU ; Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2018 | BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. | CHEE-WEE LIU ; Chen, Pin-Shiang; Lee, Shou-Chung; Oates, A. S.; CHEE-WEE LIU | IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018 | | | |
2019 | Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs | Lee M.H; MING-HAN LIAO ; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 12 | 0 | |
2018 | Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well | CHEE-WEE LIU ; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; CHEE-WEE LIU | Optical Materials Express | | | |
2011 | Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers | CHEE-WEE LIU ; Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; CHEE-WEE LIU | Applied Physics Letters | | | |
2004 | BICMOS devices under mechanical strain | CHEE-WEE LIU ; Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | | | |
2011 | Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs | CHEE-WEE LIU ; Hsiao, Y.-J.; Hsueh, T.-J.; Shieh, J.-M.; Yeh, Y.-M.; Wang, C.-C.; Dai, B.-T.; Hsu, W.-W.; Lin, J.-Y.; Shen, C.-H.; Liu, C.W.; Hu, C.; Yang, F.-L.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2008 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H. ; Hung, T.-A.; Kuo, P.-S.; Liao, M.H. ; Deng, Y.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
2007 | Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes | Jan, S.-R.; Cheng, T.-H.; Liao, M.H. ; Hung, T.-A.; Deng, Y.; CHEE-WEE LIU | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 | 0 | 0 | |
2022 | Boost of orthorhombic population with amorphous SiO2interfacial layer-a DFT study | Chen Y.-W; CHEE-WEE LIU | Semiconductor Science and Technology | 3 | 3 | |
2018 | Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition | CHEE-WEE LIU ; Tsai C.-E; Lu F.-L; Chen P.-S; CHEE-WEE LIU | Thin Solid Films | | | |
2007 | Broadband SiGeSi quantum dot infrared photodetectors | CHEE-WEE LIU ; Lin, C.-H.; Yu, C.-Y.; Peng, C.-Y.; Ho, W.S.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2005 | Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers | Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; MING-HAN LIAO ; Liao, Kao-Feng; CHEE-WEE LIU | Applied Physics Letters | 13 | 12 | |
2006 | Buckling characteristics of SiGe layers on viscous oxide | Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; MING-HAN LIAO ; CHEE-WEE LIU | Journal of Applied Physics | 3 | 3 | |
2003 | Buried oxide thickness effect and lateral scaling of SiGe HBT on SO1 substrate | CHEE-WEE LIU ; Chang, S.T.; Liu, Y.H.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | | | |
2005 | Calculation of the electron mobility in silicon inversion layers: Dependence on surface orientation, channel direction, and stress | CHEE-WEE LIU ; Yang, I.-J.; Peng, C.-Y.; Chang, S.T.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |