https://scholars.lib.ntu.edu.tw/handle/123456789/309381
標題: | Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers | 作者: | Pei, Z. Shi, J.-W. Hsu, Y.-M. Yuan, F. Liang, C.S. Lu, S.C. Hsieh, W.Y. Tsai, M.-J. CHEE-WEE LIU |
關鍵字: | Bandwidth; Nonideal (nkT) base current; SiGe | 公開日期: | 2004 | 卷: | 25 | 期: | 5 | 起(迄)頁: | 286-288 | 來源出版物: | IEEE Electron Device Letters | 摘要: | In this letter, we create a path to remove excess carriers in the base region of a SiGe phototransistor (HPT) by introducing the trap centers. The behavior of the trap centers in the SiGe heterojunction bipolar transistor (HBT) is a form of nonideal (nkT) base current. The responsivity of the device is ∼0.43 A/W with fully SiGe HBT-compatible device structure to facilitate the integration of the following amplification circuitry. The full-width at half-maximum of the pulse is ∼90 ps and the tail of the optical pulse response is largely reduced with the nkT current. By reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This proposes SiGe HPT is applicable for optoelectronic technology. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-2442428490&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/309381 https://www.scopus.com/inward/record.uri?eid=2-s2.0-2442428490&doi=10.1109%2fLED.2004.826975&partnerID=40&md5=28e7038fa5896ff489214e844df1fda8 |
ISSN: | 07413106 | DOI: | 10.1109/LED.2004.826975 | SDG/關鍵字: | Amplification; Charge carriers; Electric currents; Electron traps; Heterojunction bipolar transistors; Optoelectronic devices; Semiconducting silicon compounds; Semiconductor device structures; Amplification circuitry; Excess carriers; Integratable phototransistor; Nonideal base current; Phototransistors |
顯示於: | 電機工程學系 |
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