公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1989 | Electrical response of superconducting YBa2Cu3O7- $δ$ to light | Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG | Applied Physics Letters | | | |
1984 | Electromechanical and metallurgical properties of liquid-infiltration Nb-Ta/Sn multifilamentary superconductor | Ekin, JW; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
1991 | Electron cyclotron resonance plasma preparation of GaAs substrates for molecular beam epitaxy | Choquette, Kent D; Hong, M; Freund, Robert S; Mannaerts, JP; Wetzel, Robert C; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1988 | Electronic excitations of the Y Ba 2 Cu 3 O 7- x superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, Sy\\_Hwang; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physical Review B | | | |
1988 | Electronic excitations of the YBa 2 Cu 3 O 7√/sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | | | | |
1988 | Electronic excitations of the YBa/sub 2/Cu/sub 3/O/sub 7/. sqrt./sub x/superconductor: A study by transmission electron-energy-loss spectroscopy with an electron microprobe | Chen, CH; Schneemeyer, LF; Liou, SH; Hong, M; Kwo, J; Chen, HS; Waszczak, JV; MINGHWEI HONG | Physics Review B: Condensed Matter | | | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2011 | Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study | Pi, T-W; Lee, WC; Huang, ML; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
1999 | Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | MRS Proceedings | | | |
2001 | Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG | APS Meeting Abstracts | | | |
2001 | Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfaces | Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG | Solid-State Electronics | 83 | 81 | |
2001 | Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces | Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG | Solid-State Electronics | | | |
2009 | Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
2009 | Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
2006 | Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure | Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1995 | Enhancement in excitonic absorption for GaAs/AlGaAs multiple-quantum-well structures under external anisotropic strain | Huang, Man-Fang; Garmire, Elsa; Partovi, Afshin; Hong, Minghwei; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |