公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer | Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; MINGHWEI HONG ; Ng, KK; Bude, J | 24th Annual Gallium Arsenide Integrated Circuit Symposium, 2002 | | | |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; MINGHWEI HONG ; Kwo, J.; Lin, Y.S.; Hsu, S.S.H. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; MINGHWEI HONG ; Kwo, J; Lin, YS; Hsu, Shawn SH | Journal of Vacuum Science & Technology B | | | |
2010 | DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, T; Chang, P; Chiu, H; MINGHWEI HONG ; Kwo, J; Lin, Y; Hsu, S | Jorurnal Vacuum Science and Technology B | | | |
1984 | dc getter sputtered amorphous GdCo films: Magnetic anisotropy and in-depth chemical composition | MINGHWEI HONG ; Gyorgy, EM; Bacon, DD | Applied Physics Letters | | | |
1986 | dc magnetron-and diode-sputtered polycrystalline Fe and amorphous Tb (FeCo) films: Morphology and magnetic properties | MINGHWEI HONG ; Gyorgy, EM; Van Dover, RB; Nakahara, S; Bacon, DD; Gallagher, PK | Journal of Applied Physics | | | |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; MINGHWEI HONG ; Dekoster, J; others | Surface Science | | | |
2011 | Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivation | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; MINGHWEI HONG ; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. | Surface Science | | | |
2007 | Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering | MINGHWEI HONG ; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY | Thin solid films | | | |
2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | MINGHWEI HONG ; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y. | Thin Solid Films | | | |
1995 | Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs | Mills Jr, AP; MINGHWEI HONG ; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE | Journal of Applied Physics | | | |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; MINGHWEI HONG ; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y. | Solid-State Electronics | | | |
1997 | Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY | Solid-State Electronics | | | |
1997 | DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION | Ren, F; MINGHWEI HONG ; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP | Electrochemical Society ( ECS ) Proceedings | | | |
1997 | Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs | Ren, F; MINGHWEI HONG ; Kuo, JM; Hobson, WS; Tsai, HS; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others | Device Research Conference Digest 1997 | | | |
1998 | Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; MINGHWEI HONG ; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ | Solid-State Electronics | | | |
2015 | Demonstration of large field effect in topological insulator films via a high-kappa back gate | Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; MINGHWEI HONG ; Kwo, J | APS March Meeting Abstracts | | | |
2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; MINGHWEI HONG ; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y. | IEEE Electron Device Letters | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis | Wang, Yi Chun; MINGHWEI HONG ; Kuo, JM; Mannaerts, JP; Kwo, J; Tsai, HS; Krajewski, JJ; Chen, YK; Cho, AY | Electron Device Letters, IEEE | | | |