公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1992 | Large dynamic range CW single mode top surface-emitting laser with small window | Du, Guotong; Zhao, Fanghai; Zhang, Xiaobo; Gao, Dingsan; Lin, J; Gamelin, JK; Wu, B; Wang, S; MINGHWEI HONG ; Mannaerts, JP | 13th IEEE International Semiconductor Laser Conference, 1992 | | | |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111) | Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; MINGHWEI HONG ; Kwo, J; Hsu, CH | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; MINGHWEI HONG ; Kwo, J.; Hsu, C.-H. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O 2 thin films probed by EXAFS | Soo, YL; Weng, SC; Sun, WH; Chang, SL; Lee, WC; Chang, YS; Kwo, J; MINGHWEI HONG ; Ablett, JM; Kao, C-C; others | Physical Review B | | | |
2007 | Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS | Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; MINGHWEI HONG ; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F. | Physical Review B - Condensed Matter and Materials Physics | | | |
2006 | Local Environment Surrounding Co in MBE-grown HfO2: Co Thin Films Probed by EXAFS and XMCD | Soo, YL; Weng, SC; Sun, WH; Chang, SL; Lee, WC; Chang, YS; MINGHWEI HONG ; Kwo, J; Yang, ZS; Lin, H-J; others | APS Meeting Abstracts | | | |
1995 | Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells | Chua, CL; Zhu, ZH; Lo, YH; MINGHWEI HONG ; Bhat, R | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995 | | | |
1994 | Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates | Chua, CL; Lin, CH; Zhu, ZH; Lo, YH; MINGHWEI HONG ; Mannaerts, JP; Bhat, R | Lasers and Electro-Optics Society Annual Meeting, 1993 | | | |
1997 | Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range | Christenson, GL; Tran, ATTD; Zhu, ZH; Lo, YH; MINGHWEI HONG ; Mannaerts, JP; Bhat, R | Photonics Technology Letters, IEEE | | | |
1997 | Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling | Passlack, M; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR | IEEE Transactions on Electron Devices | | | |
1996 | Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy | Passlack, M; MINGHWEI HONG | MRS Proceedings | | | |
1996 | Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy | MINGHWEI HONG ; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ | Journal of Vacuum Science & Technology B | | | |
2011 | Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2016 | Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y <inf>2</inf> O <inf>3</inf> /n-GaAs(001) | Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; MINGHWEI HONG | Applied Physics Express | | | |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics | Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; MINGHWEI HONG ; Caymax, M; Heyns, Marc | Applied Physics Letters | | | |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; MINGHWEI HONG ; Caymax, M.; Heyns, M. | Applied Physics Letters | | | |
1987 | Low magnetic field superconducting phase diagram of the high-Tc YBa2Cu3O9-$δ$ | Drumheller, John E; Rubenacker, Gerald V; Ford, WK; erson, J; MINGHWEI HONG ; Liou, SH; Kwo, J; Chen, CT | Solid state communications | | | |
1987 | Low magnetic field superconducting phase diagram of the high-Tsub (c) YBa 2 Cu 3 Osub (9-$δ$) | Drumheller, JE; Rubenacker, GV; Ford, WK; erson, J; MINGHWEI HONG ; Liou, SH; Kwo, J; Chen, CT | | | | |
1994 | Low pressure etching outer stack and peripheral active layer; epitaxial regrowth of lower refractive index material | Choquette, Kent D; Freund, Robert S; MINGHWEI HONG | | | | |
1993 | Low resistance and large current range CW single-mode top surface-emitting laser with small window | Du, Guotong; Zhao, Fanghai; Zhang, Xiaobo; Gao, Dingsan; Lin, J; Gamelin, JK; Wu, B; Wang, S; MINGHWEI HONG ; Mannaerts, JP | Optical and quantum electronics | | | |