公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2005 | Floating-Body Kink-Effect RElated Capacitance Behavior of Nanometer PD SOI NMOS Devices | G. S. Lin; J. B. Kuo; JAMES-B KUO | EDMS | |||
2005 | Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation | G. S. Lin; J. B. Kuo; JAMES-B KUO | EDSM | |||
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS |