Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2017 | Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer | Huang K.-W.; Cheng P.-H.; Lin Y.-S.; Wang C.-I.; Lin H.-C.; HSIN-CHIH LIN ; MIIN-JANG CHEN | Journal of Applied Physics | 5 | 5 |