Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2008 | Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells | T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; L. C. Chou; HAO-HSIUNG LIN | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 30 | 28 | |
2013 | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN | Applied Physics Express | 15 |