Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2013 | Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation | K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN | Applied Physics Express | 15 |