Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2015 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides | Yeh, P.-C.; Lin, Y.-W.; Huang, Y.-L.; Hung, J.-H.; Lin, B.-R.; Yang, L.; Wu, C.-H.; Wu, T.-K.; Wu, C.-H.; CHAO-HSIN WU ; LUNG-HAN PENG | Applied Physics Express | 4 | 4 |