公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Device Research Conference, 2008 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG | Microelectronic Engineering | | | |
2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2013 | Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition | Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Applied Surface Science | 19 | 19 | |
2014 | Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer deposition | Pi, TW; Lin, TD; Lin, HY; Chang, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2007 | The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface | Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |